PREPARATION OF SILICON-NITRIDE FILMS AT ROOM-TEMPERATURE USING DOUBLE-TUBED COAXIAL LINE-TYPE MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION SYSTEM

被引：22

作者：

KATO, I

NOGUCHI, K

NUMADA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：492 / 497

页数：6

共 16 条

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