GROWTH OF GAAS IN A ROTATING-DISK MOCVD REACTOR

被引：11

作者：

THOMPSON, AG

SUNDARAM, VS

GIRARD, GR

FRAAS, LM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90123-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：901 / 910

页数：10

共 27 条

[1] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) :613-618

[2]

CHEN K, 1986, J CRYST GROWTH, V77, P199

[3] A COMPARISON OF IV-N-DOPANTS AND VI-N-DOPANTS FOR MOVPE-GROWN INP [J].

CLAWSON, AR ;

VU, TT ;

ELDER, DI .

JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) :211-218

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[5] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[6]

EVANS GH, 1983, SAND868843 SAND REP

[7] DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .1. SILANE [J].

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :543-550

[8] COMPLEX FLOW PHENOMENA IN VERTICAL MOCVD REACTORS - EFFECTS ON DEPOSITION UNIFORMITY AND INTERFACE ABRUPTNESS [J].

FOTIADIS, DI ;

KREMER, AM ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :154-164

[9] VACUUM CHEMICAL EPITAXY UTILIZING ORGANOMETALLIC SOURCES [J].

FRAAS, LM ;

MCLEOD, PS ;

PARTAIN, LD ;

COHEN, MJ ;

CAPE, JA .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (03) :175-180

[10]

HAACKE G, 1988, J ELECTROCHEM SOC, V35, P715

← 1 2 3 →