PULSED LASER ANNEALING OF RF SPUTTERED AMORPHOUS SI-H FILMS DOPED WITH ARSENIC

被引：5

作者：

FOGARASSY, E

STUCK, R

TOULEMONDE, M

BRUYERE, JC

SIFFERT, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3261 / 3266

页数：6

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