HOT-ELECTRON-INDUCED PHOTON AND PHOTOCARRIER GENERATION IN SILICON MOSFETS

被引：112

作者：

TAM, S

HU, CM

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1264 / 1273

页数：10

相关论文

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