STIMULATED AND LASER-EMISSION INVOLVING NITROGEN ISOELECTRONIC IMPURITIES IN ALXGA1-XAS (X=0.39, 77DEGREESK)

被引：6

作者：

MAKITA, Y ^{[1
]}

GONDA, S ^{[1
]}

IJUIN, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 05期

关键词：

D O I：

10.1063/1.89058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：309 / 311

页数：3

共 8 条

[1] NEW LUMINESCENCE LINE DUE TO NITROGEN IMPLANTED INTO ALXGA1-XAS(X=0.37) [J].

GONDA, S ;

MAKITA, Y .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :392-394

[2] ENERGY-LEVELS OF NITROGEN ISOELECTRONIC IMPURITIES IN ALXGA1-XAS [J].

GONDA, S ;

MAKITA, Y ;

MUKAI, S ;

TSURUSHIMA, T ;

TANOUE, H .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :196-197

[3]

GONDA S, 1976, JPN J APPL PHYS, V13, P565

[4] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J].

HOLONYAK, N ;

DUPUIS, RD ;

MACKSEY, HM ;

GROVES, WO ;

CRAFORD, MG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4148-&

[5] COMPOSITION-RATIO DEPENDENCE OF FORMATION OF BOUND-STATES IN NITROGEN-IMPLANTED ALXGA1-XAS [J].

MAKITA, Y ;

LJUIN, H ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :287-289

[6] ENHANCEMENT OF EMISSION INTENSITY IN INDIRECT-GAP ALXGA1-XAS (X=0.53) BY NITROGEN-ION IMPLANTATION [J].

MAKITA, Y ;

GONDA, SI ;

IJUIN, H ;

TSURUSHIMA, T ;

TANOUE, H ;

MAEKAWA, S .

APPLIED PHYSICS LETTERS, 1976, 28 (02) :103-105

[7]

MAKITA Y, UNPUBLISHED

[8] STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) OF DIRECT AND INDIRECT GAAS1-XPX ON NITROGEN ISOELECTRONIC TRAP TRANSITIONS [J].

SCIFRES, DR ;

ZACK, GW ;

HOLONYAK, N ;

KEUNE, DL ;

MACKSEY, HM ;

DUPUIS, RD ;

GROVES, WO ;

CRAFORD, MG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2368-&

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