INSITU AUGER-ELECTRON SPECTROSCOPY INVESTIGATION OF THE CHEMICAL BONDING OF ION-BEAM-DEPOSITED SILICON-NITRIDE

被引：10

作者：

BOUCHIER, D

BOSSEBOEUF, A

机构：

来源：

THIN SOLID FILMS | 1986年 / 139卷 / 01期

关键词：

D O I：

10.1016/0040-6090(86)90052-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：95 / 108

页数：14

共 38 条

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