GROWTH AND CHARACTERIZATION OF CUGAS2 THIN-FILMS ON (100) SI BY VACUUM DEPOSITION WITH 3 SOURCES

被引：14

作者：

OISHI, K ^{[1
]}

KOBAYASHI, S ^{[1
]}

KANEKO, F ^{[1
]}

机构：

[1] NIIGATA UNIV,FAC ENGN,IKARASHI,NIIGATA 95021,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 153卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(95)00154-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The vacuum evaporation technique, using constituent elementary substances as sources, has been examined in growing CuGaS2 on (100) Si wafers. The RHEED patterns of the grown films show that two different orientational types coexist in the film, i.e., the type with the c-axis of CuGaS2 along the two a-axes of the Si substrate and the type with the c-axis normal to the substrate surface. Additional spats are observed in the RHEED patterns, which propose that the (112) twin 180 degrees rotated about [221] also exists in the film.

引用

页码：158 / 163

页数：6

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