THE STRUCTURAL, CHEMICAL AND COMPOSITIONAL NATURE OF AMORPHOUS-SILICON CARBIDE FILMS

被引:38
作者
HICKS, SE [1 ]
FITZGERALD, AG [1 ]
BAKER, SH [1 ]
DINES, TJ [1 ]
机构
[1] UNIV DUNDEE,DEPT CHEM,DUNDEE DD1 4HN,SCOTLAND
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1990年 / 62卷 / 02期
关键词
D O I
10.1080/13642819008226986
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A range of amorphous hydrogenated silicon-carbide films have been produced using the plasma-enhanced chemical-vapour deposition technique with silane and methane diluted in hydrogen as the parent molecules. The air-exposed and sputter- cleaned surfaces of these films have been investigated by means of X-ray photoelectron spectroscopy. Auger electron spectroscopy, secondary-ion mass spectrometry, Raman spectroscopy and reflection-electron diffraction. The structural and chemical nature of the films has been determined as a function of the methane: silane ratio by a combination of the above techniques. X-ray photoelectron spectroscopy and Auger electron spectroscopy have been used to determine the carbon content of the films also as a function of the methane: silane ratio. © 1990 Taylor & Francis Ltd.
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页码:193 / 212
页数:20
相关论文
共 31 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   ELECTRONIC AND OPTICAL-PROPERTIES OF A-SI1-XCX FILMS PREPARED FROM A H2-DILUTED MIXTURE OF SIH4 AND CH4 [J].
BAKER, SH ;
SPEAR, WE ;
GIBSON, RAG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (02) :213-223
[3]  
BENNAIM A, 1987, SOLVATION THERMODYNA, pCH3
[4]  
BROWN A, 1988, EUROPEAN SPECTROSCOP, V81, P1
[5]   REACTIVE PLASMA DEPOSITED SIXCYHZ FILMS [J].
CATHERINE, Y ;
TURBAN, G .
THIN SOLID FILMS, 1979, 60 (02) :193-200
[6]   QUANTIFICATION OF AMORPHOUS SIC-H FILMS USING XPS AND AES WITH 3 STANDARDS [J].
FITZGERALD, AG ;
HENDERSON, AE ;
HICKS, SE ;
MOIR, PA ;
STOREY, BE .
SURFACE AND INTERFACE ANALYSIS, 1989, 14 (6-7) :376-380
[7]  
Fukada N., 1983, Technology Reports of the Osaka University, V33, P283
[8]   X-RAY PHOTOELECTRON-SPECTROSCOPY AND RAMAN-SPECTROSCOPY INVESTIGATIONS OF AMORPHOUS SIXC1-X(H) COATINGS OBTAINED BY CHEMICAL VAPOR-DEPOSITION FROM THERMALLY LABILE ORGANO-SILICON COMPOUNDS [J].
GERAULT, JP ;
MORANCHO, R ;
CONSTANT, G ;
MAZEROLLES, P ;
EHRHARDT, JJ ;
ALNOT, M .
THIN SOLID FILMS, 1983, 101 (01) :83-96
[9]   VALENCE BAND-STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS STUDIED BY PHOTOELECTRON-SPECTROSCOPY [J].
KATAYAMA, Y ;
SHIMADA, T ;
KOBAYASHI, KLI ;
JIANG, C ;
DAIMON, H ;
MURATA, Y .
PHYSICA B & C, 1983, 117 (MAR) :947-949
[10]  
KATZ W, 1987, MRS B, V40, P1