GROWTH OF GAINAS(P)/INP HETEROSTRUCTURES ON NONPLANAR SUBSTRATES USING MOMBE (CBE)

被引：5

作者：

BAUR, B

HEINECKE, H

SCHIER, M

EMEIS, N

机构：

[1] Siemens Corporate Research and Development, D- W-8000 München 83

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90599-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This investigation reports on the overgrowth of GaInAs(P)/InP heterostructures on ridges having sidewall angles between 44-degrees and 86-degrees. The ridges were aligned towards the [011] and [011BAR] direction. The most ideal tracking according to the step was found for the steepest etched angles with steps directed towards [011]. The growth behavior on such a facet should allow for a high quality butt joint contact of two heterostructures devices. The growth in the perpendicular direction exhibits a different behavior as corrugations are observed in the step area. It seems that the different chemical reactivities of the various steps are responsible for the anisotropic growth behavior.

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页码：175 / 178

页数：4

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