VARIATIONS IN INTERFACE COMPOUND NUCLEATION FOR TI-AL ULTRATHIN FILMS ON SI SUBSTRATES

被引：7

作者：

HAN, CC ^{[1
]}

BENE, RW ^{[1
]}

机构：

[1] UNIV TEXAS,ELECTR RES CTR,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.96385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1077 / 1079

页数：3

共 16 条

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BABCOCK, SE ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6898-6905

[2] 1ST NUCLEATION RULE FOR SOLID-STATE NUCLEATION IN METAL-METAL THIN-FILM SYSTEMS [J].

BENE, RW .

APPLIED PHYSICS LETTERS, 1982, 41 (06) :529-531

[3] SOLID-STATE NUCLEATION IN THE TI-SI ULTRATHIN FILM SYSTEM [J].

BENE, RW ;

YANG, HY .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) :1-10

[4]

BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[5] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[6] REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING [J].

BRILLSON, LJ ;

SLADE, ML ;

KATNANI, AD ;

KELLY, M ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :110-112

[7] 2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES [J].

EIZENBERG, M ;

TU, KN ;

PALMSTROM, CJ ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :905-907

[8] FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY-BARRIER ON SI - ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SI [J].

EIZENBERG, M ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1577-1585

[9] THIN PALLADIUM SILICIDE CONTACTS TO SILICON [J].

KRITZINGER, S ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :305-310

[10]

Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

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