REEXAMINATION OF THE FORMATION MECHANISM OF CUPT-TYPE NATURAL SUPERLATTICES IN ALLOY SEMICONDUCTORS

被引：62

作者：

SUZUKI, T

GOMYO, A

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki-shi, Kanagawa, 213, 4-1-1, Miyazaki

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91000-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The previously proposed natural superlattice (NSL) formation mechanism is experimentally re-examined by using Ga0.5In0.5P grown on (001) vicinal (6-degrees off towards the [110BAR] direction) GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). Based mainly on the experimental results: non-existence of the (111)B micro-facets at the growing interface and extremely large (several hundred angstrom) single NSL domain sizes compared with the average terrace width (approximately 27 angstrom), a new NSL formation (step-terrace-reconstruction (STR)) mechanism is presented. The mechanism assumes a reconstruction of the steps and terraces at the column V atom stabilized vicinal (001) surface, on which parity of the number of the column III atoms for each terrace is even.

引用

页码：353 / 359

页数：7

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