INFLUENCE OF LAYER THICKNESS ON NUCLEATION IN AMORPHOUS-SILICON THIN-FILMS

被引：15

作者：

ROORDA, S ^{[1
]}

KAMMANN, D ^{[1
]}

SINKE, WC ^{[1
]}

VANDEWALLE, GFA ^{[1
]}

VANGORKUM, AA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

MATERIALS LETTERS | 1990年 / 9卷 / 7-8期

关键词：

D O I：

10.1016/0167-577X(90)90056-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solid phase crystallization in amorphous Si films of different thicknesses is investigated. It is found that the rate (per unit area) at which crystalline grains nucleate increases with the layer thickness. This is a strong indication that nucleation in amorphous Si occurs throughout the volume of the material rather than at the surface. © 1990.

引用

页码：259 / 262

页数：4

共 11 条

[1]

Avrami M., 1940, J CHEM PHYS, V8, P212, DOI DOI 10.1063/1.1750631

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].