INVESTIGATION OF TRIETHYLARSENIC AS A REPLACEMENT FOR ARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS

被引：30

作者：

LUM, RM ^{[1
]}

KLINGERT, JK ^{[1
]}

WYNN, AS ^{[1
]}

LAMONT, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期

关键词：

D O I：

10.1063/1.99103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1475 / 1477

页数：3

共 19 条

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[2]

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GALLANT, M .

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[4] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB .

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[5] IMPROVED MOBILITY IN OM-VPE-GROWN GA1-XINXAS [J].

DIETZE, WT ;

LUDOWISE, MJ ;

COOPER, CB .

ELECTRONICS LETTERS, 1981, 17 (19) :698-699

[6] GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY USING THERMALLY PRECRACKED TRIMETHYL-ARSENIC [J].

FRAAS, LM ;

MCLEOD, PS ;

WEISS, RE ;

PARTAIN, LD ;

CAPE, JA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) :299-301

[7]

HATA M, 1987, JUN EL MAT C SANT BA

[8] LOW-PRESSURE OMVPE OF GAAS USING TRIETHYLGALLIUM [J].

KIMURA, K ;

TAKAGISHI, S ;

HORIGUCHI, S ;

KAMON, K ;

MIHARA, M ;

ISHII, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1393-1396

[9] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES [J].

KUECH, TF ;

POTEMSKI, R .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :821-823

[10] OMVPE GROWTH OF GAINAS [J].

KUO, CP ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) :461-470

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