SOLUBILITY OF IMPLANTED DOPANTS IN POLYSILICON - PHOSPHORUS AND ARSENIC

被引:6
作者
LIFSHITZ, N
机构
关键词
D O I
10.1149/1.2119614
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2464 / 2467
页数:4
相关论文
共 13 条
[1]   QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118
[2]  
KINSBRON E, UNPUB
[3]   THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J].
LIETOILA, A ;
GIBBONS, JF ;
SIGMON, TW .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :765-768
[4]   MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].
LU, NCC ;
GERZBERG, L ;
LU, CY ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830
[5]   DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].
MANDURAH, MM ;
SARASWAT, KC ;
HELMS, CR ;
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763
[6]  
MASETTI G, 1977, SEMICONDUCTOR SILICO, P648
[7]   GRAIN-GROWTH MECHANISMS IN POLYSILICON [J].
MEI, L ;
RIVIER, M ;
KWARK, Y ;
DUTTON, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1791-1795
[8]   A PROCESS SIMULATION-MODEL FOR MULTILAYER STRUCTURES INVOLVING POLYCRYSTALLINE SILICON [J].
MEI, L ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1726-1734
[9]   ELECTRICAL CHARACTERISTICS OF HEAVILY ARSENIC AND PHOSPHORUS DOPED POLYCRYSTALLINE SILICON [J].
MUROTA, J ;
SAWAI, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3702-3708
[10]   ELECTRICAL-PROPERTIES OF THERMALLY AND LASER ANNEALED POLYCRYSTALLINE SILICON FILMS HEAVILY DOPED WITH ARSENIC AND PHOSPHORUS [J].
SOLMI, S ;
SEVERI, M ;
ANGELUCCI, R ;
BALDI, L ;
BILENCHI, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1811-1818