ELECTRICAL CHARACTERISTICS OF HEAVILY ARSENIC AND PHOSPHORUS DOPED POLYCRYSTALLINE SILICON

被引：40

作者：

MUROTA, J

SAWAI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.331157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3702 / 3708

页数：7

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