FREQUENCY CAPABILITY OF STRAINED ALAS/INGAAS RESONANT-TUNNELING DIODES

被引：5

作者：

MOUNAIX, P

LHEURETTE, E

MOLLOT, F

LIPPENS, D

机构：

[1] Institut d'Electronique et Microélectronique du Nord, Université des Sciences et Technologies de Lille, F-59652 Villeneuve d'Ascq Cedex

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 17期

关键词：

RESONANT TUNNELING DEVICES; TUNNEL DIODES;

D O I：

10.1049/el:19950960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The frequency capabilities of integrated In0.53Ga0.47As/AlAs resonant tunnelling diodes have been investigated by successfully tracking their resistive cutoff frequencies when the samples are biased in the negative differential conductance region. The devices exhibit extremely high peak current density (J(p) = 175kAcm(2)) and very low series resistance (6 x 10(-7)Omega cm(2)) so that submillimetre wave operation can be expected.

引用

页码：1508 / 1510

页数：3

共 6 条

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