THE GROWTH AND CHARACTERIZATION OF CDTE EPITAXIAL LAYERS ON CDTE AND INSB BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：23

作者：

WANG, CH ^{[1
]}

CHENG, KY ^{[1
]}

YANG, SJ ^{[1
]}

HWANG, FC ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LAB,HSIN CHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：757 / 762

页数：6

共 26 条

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[7] VAPOR-PHASE GROWTH OF CDTE [J].

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[8] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

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[9] METALORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE EPITAXIAL-FILMS ON INSB AND GAAS SUBSTRATES [J].

HOKE, WE ;

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TRACZEWSKI, R .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1046-1048

[10]

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