INTERFACIAL IMPURITIES AND REACTION BETWEEN SI AND EVAPORATED AL

被引：24

作者：

BEST, JS ^{[1
]}

MCCALDIN, JO ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

关键词：

D O I：

10.1063/1.322113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4071 / 4072

页数：2

共 7 条

[1]

BENNEMA B, 1973, CRYSTAL GROWTH INTRO, pCH12

[2] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

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KLEIN, DL .

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :86-93

MCCALDIN, JO ;

SANKUR, H .

[5] INTERFACE EFFECTS IN DISSOLUTION OF SILICON INTO THIN GOLD-FILMS [J].

SANKUR, H ;

MCCALDIN, JO .

[6] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION [J].

SANKUR, H ;

MCCALDIN, JO ;

DEVANEY, J .

[7] DIFFUSION-LIMITED SI PRECIPITATION IN EVAPORATED AL/SI FILMS [J].

VANGURP, GJ .