INTERFACE EFFECTS IN DISSOLUTION OF SILICON INTO THIN GOLD-FILMS

被引：12

作者：

SANKUR, H ^{[1
]}

MCCALDIN, JO ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91109 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 04期

关键词：

D O I：

10.1149/1.2134261

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：565 / 569

页数：5

共 14 条

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[2] RECRYSTALLIZATION OF THIN GOLD FILMS - INFLUENCE ON THEIR ELECTRICAL PROPERTIES [J].

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CROCE, P ;

DEVANT, G ;

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[3]

DAY H, TO BE PUBLISHED

[4]

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MAYER, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02) :401-&

[6] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].

HIRAKI, A ;

NICOLET, MA ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&

[7] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].

HIRAKI, A ;

MAYER, JW ;

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JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3643-&

[8] INTERNAL STRESSES AND INTERDIFFUSION OF TI-PD-AU FILMS STUDIED BY X-RAY-DIFFRACTION TECHNIQUES [J].

LAU, SS ;

SUN, RC .

THIN SOLID FILMS, 1972, 10 (02) :273-+

[9] BEAM-LEAD TECHNOLOGY [J].

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[10] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

LOCKER, LD ;

CAPIO, CD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4366-4369

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