OBSERVATION AND ELECTRONIC CHARACTERIZATION OF 2 E' CENTER CHARGE TRAPS IN CONVENTIONALLY PROCESSED THERMAL SIO2 ON SI

被引：14

作者：

CONLEY, JF ^{[1
]}

LENAHAN, PM ^{[1
]}

EVANS, HL ^{[1
]}

LOWRY, RK ^{[1
]}

MORTHORST, TJ ^{[1
]}

机构：

[1] HARRIS SEMICOND INC,MELBOURNE,FL 32901

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that at least two varieties of E' defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E(gamma p)'. We find that EP defect capture cross sections exceed the corresponding E(gamma p)' values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E(gamma p)' defects, and that the EP resonance, unlike the E(gamma p)' resonance is not stable at room temperature. (c) 1994 American Institute of Physics.

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页码：2281 / 2283

页数：3

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