QUANTUM SIZE EFFECT IN THE TRANSPORT OF ELECTRONS IN SEMICONDUCTOR QUANTUM WELL STRUCTURES

被引:11
作者
OGALE, SB
MADHUKAR, A
机构
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089
[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
关键词
D O I
10.1063/1.333050
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:483 / 486
页数:4
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共 15 条
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP [J].
CHAI, YG ;
CHOW, R .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1229-1232
[3]   INFLUENCE OF ALAS MOLE FRACTION ON THE ELECTRON-MOBILITY OF (AL,GA)AS/GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1028-1029
[4]  
GOSSARD AC, 1982, THIN FILMS PREPARATI
[5]   HOMOGENEOUS DYNAMICAL CONDUCTIVITY OF SIMPLE METALS [J].
GOTZE, W ;
WOLFLE, P .
PHYSICAL REVIEW B, 1972, 6 (04) :1226-&
[6]  
GRUNTHANER FJ, 1983, J VAC SCI TECHNOL B, V1
[7]   LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
HERSEE, SD ;
DUCHEMIN, JP .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 :65-80
[8]   EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
MIMURA, T ;
FUJII, T ;
NANBU, K ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L245-L248
[9]   ELECTRICAL-PROPERTIES OF MBE-GROWN GAAS/N-ALGAAS HETEROSTRUCTURES AND APPLICATION TO HIGH-SPEED DEVICES [J].
HIYAMIZU, S ;
MIMURA, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :456-456
[10]   QUANTUM TRANSPORT IN A SINGLE LAYERED STRUCTURE FOR IMPURITY SCATTERING [J].
LEE, J ;
SPECTOR, HN ;
ARORA, VK .
APPLIED PHYSICS LETTERS, 1983, 42 (04) :363-365