INSITU SELECTIVE-AREA EPITAXY OF GAAS USING A GAAS OXIDE LAYER AS A MASK

被引：10

作者：

HIRATANI, Y

OHKI, Y

SUGIMOTO, Y

AKITA, K

机构：

[1] Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki, 300-26

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91041-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective-area epitaxy of GaAs was performed by metalorganic molecular beam epitaxy using a GaAs oxide mask. No deposition of polycrystalline GaAs was observed on a GaAs oxide mask after the selective-area epitaxy using a trimethylgallium (TMG) and As4 as source materials. An observation of the decomposition of TMG indicated that it occurred above 350-degrees-C on an oxide-free surface of GaAs, while decomposition did not occur below 550-degrees-C on a GaAs oxide surface. This surface-catalyzed decomposition of TMG explains the selectivity of GaAs growth.

引用

页码：570 / 573

页数：4

共 7 条

[1] SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS [J].