TEMPERATURE-DEPENDENT CRITICAL LAYER THICKNESS FOR IN0.36GA0.64AS/GAAS SINGLE QUANTUM-WELLS

被引：57

作者：

EKENSTEDT, MJ

WANG, SM

ANDERSSON, TG

机构：

[1] Department of Physics, Chalmers University of Technology

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.104511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of In0.36Ga0.64As/GaAs single quantum wells were grown by molecular beam epitaxy to investigate the dependence of the critical layer thickness (CLT) on growth temperature. The layers were grown between 410 and 590-degrees-C. Photoluminescence was then used to determine the CLT as the onset of three-dimensional growth which occurs at 15 angstrom for 570-degrees-C and at 55 angstrom when grown at 470-degrees-C. Our results indicate a strong and nearly linear temperature dependence for the CLT.

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页码：854 / 855

页数：2

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