CHARGE STORAGE EFFECTS IN SILICON DIOXIDE FILMS

被引：49

作者：

YAMIN, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 03期

关键词：

D O I：

10.1109/T-ED.1965.15461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：88 / +

页数：1

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