SILICIDE-LIKE ELECTRON-STATES IN THE SI-MO INTERFACE GROWN AT LIQUID-NITROGEN TEMPERATURE

被引：7

作者：

ABBATI, I

BRAICOVICH, L

DEMICHELIS, B

FASANA, A

PUPPIN, E

RIZZI, A

机构：

[1] Politecnico di Milano, Istituto di, Fisica, Milan, Italy, Politecnico di Milano, Istituto di Fisica, Milan, Italy

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 52卷 / 08期

关键词：

D O I：

10.1016/0038-1098(84)90399-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ultraviolet photoelectron spectra of the Si(111)-Mo interface grown at approx. 85 degree K are presented and compared with spectra of the Mo 4d states at increasing coverages on a substrate of Al. In the sharp transition region between Si and the metal the interface electron states can be understood in terms of the Si(p)-Mo(d) hybridization. In spite of the sharpness of the interface the electron states in the transition region show the same qualitative features as refractory metal silicides. 18 refs.

引用

页码：731 / 734

页数：4

共 17 条

[1] COPPER ON NI(111) - THE ELECTRON-STATES FROM SUBMONOLAYER TO SEVERAL-MONOLAYER COVERAGES [J].

ABBATI, I ;

BRAICOVICH, L ;

FASANA, A ;

BERTONI, CM ;

MANGHI, F ;

CALANDRA, C .

PHYSICAL REVIEW B, 1981, 23 (12) :6448-6455

[2] THE SI(111)-PD INTERFACE - SPECTROSCOPIC EVIDENCE OF CHEMICAL PROCESSES AT LIQUID-NITROGEN TEMPERATURE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

PENNINO, UD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1303-1305

[3] ENERGY-DEPENDENT PHOTOEMISSION IN THE STUDY OF SILICON-D METAL INTERFACES [J].

BRAICOVICH, L .

THIN SOLID FILMS, 1983, 104 (3-4) :327-335

[4] THE ELECTRON-STATES IN THE SI(111)-PD INTERFACE - TOWARDS A REASSESSMENT OF THE EXPERIMENTAL INFORMATION [J].

BRAICOVICH, L .

SURFACE SCIENCE, 1983, 132 (1-3) :315-323

[5] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[6] INTERFACE CATALYTIC EFFECT - CR AT THE SI(111)-AU INTERFACE [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG .

PHYSICAL REVIEW B, 1983, 28 (08) :4889-4892

[7] STRUCTURAL MORPHOLOGY AND ELECTRONIC-PROPERTIES OF THE SI-CR INTERFACE [J].

FRANCIOSI, A ;

PETERMAN, DJ ;

WEAVER, JH ;

MORUZZI, VL .

PHYSICAL REVIEW B, 1982, 25 (08) :4981-4993

[8] CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG ;

CHABAL, Y ;

ROWE, JE ;

POATE, JM ;

BISI, O ;

CALANDRA, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :624-627

[9] ELECTRONIC-STRUCTURE OF CR SILICIDES AND SI-CR INTERFACE REACTIONS [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG ;

SCHMIDT, FA ;

BISI, O ;

CALANDRA, C .

PHYSICAL REVIEW B, 1983, 28 (12) :7000-7008

[10] PHOTO-IONIZATION CROSS-SECTIONS FOR ATOMIC ORBITALS WITH RANDOM AND FIXED SPATIAL ORIENTATION [J].

GOLDBERG, SM ;

FADLEY, CS ;

KONO, S .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1981, 21 (04) :285-363

← 1 2 →