RESIDUAL-STRESS AND MECHANICAL-PROPERTIES OF BORON-DOPED P+-SILICON FILMS

被引:38
作者
DING, XY [1 ]
KO, WH [1 ]
MANSOUR, JM [1 ]
机构
[1] CASE WESTERN RESERVE UNIV,DEPT MECH & AEROSP ENGN,CLEVELAND,OH 44106
基金
美国国家科学基金会;
关键词
10;
D O I
10.1016/0924-4247(90)87048-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Annealing was used to relax non-uniform tensile stress in boron-doped p+-Si cantilever beams. The optimum annealing condition was determined. A for. © 1990.
引用
收藏
页码:866 / 871
页数:6
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