A MATHEMATICAL REPRESENTATION OF A MODIFIED STAGNATION FLOW REACTOR FOR MOCVD APPLICATIONS

被引：19

作者：

DILAWARI, AH ^{[1
]}

SZEKELY, J ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 108卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(91)90226-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Computed results are presented describing the behavior of a modified stagnation point reactor for an MOCVD system, employing a showerhead type gas distributor. The principal findings of the work are the following: (a) By this arrangement, it is possible to obtain a very high spatial uniformity in the deposition rate, in cases better than 0.35% for a five inch diameter wafer, (b) Both the absolute values of the gas velocity and the standoff distance were found to play a critical role in affecting the uniformity of the deposition rate. Indeed a small standoff distance was found to be an essential ingredient in obtaining a good spatial uniformity of the deposit. (c) "An upside down" orientation was found to be helpful in minimizing thermal natural convection and a further refinement was found to be possible by imposing a desired radial distribution on the gas inlet velocity profile.

引用

页码：491 / 498

页数：8

共 21 条

[1] HEAT AND MASS-TRANSFER IN HORIZONTAL VAPOR-PHASE EPITAXY REACTORS [J].