TEMPERATURE-DEPENDENT INTERFACE EVOLUTION FOR TI/GAAS(100) AND CR/GAAS(100)

被引：17

作者：

XU, F

LIN, ZD

HILL, DM

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.36.6624

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6624 / 6630

页数：7

共 27 条

[21] REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION [J].

WALDROP, JR ;

KOWALCZYK, SP ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :607-610

[22] EFFECT OF ION SPUTTERING ON INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF AU GAAS(100) SCHOTTKY CONTACTS [J].

WANG, YX ;

HOLLOWAY, PH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :613-619

[23] CRITICAL DEVELOPMENT STAGES FOR THE REACTIVE CR-GAAS(110) INTERFACE [J].

WEAVER, JH ;

GRIONI, M ;

JOYCE, J .

PHYSICAL REVIEW B, 1985, 31 (08) :5348-5354

[24] REACTIONS AT A RARE-EARTH GAAS INTERFACE - CE/GAAS(110) [J].

WEAVER, JH ;

GRIONI, M ;

JOYCE, JJ ;

DELGIUDICE, M .

PHYSICAL REVIEW B, 1985, 31 (08) :5290-5296

[25] CR ON GAAS (110) - THE EFFECT OF ELECTRONEGATIVITY ON THE SCHOTTKY-BARRIER HEIGHT [J].

WILLIAMS, MD ;

KENDELEWICZ, T ;

LIST, RS ;

NEWMAN, N ;

MCCANTS, CE ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1202-1205

[26] EPITAXY, OVERLAYER GROWTH, AND SURFACE SEGREGATION FOR CO/GAAS(110) AND CO/GAAS(100)-C(8X2) [J].

XU, F ;

JOYCE, JJ ;

RUCKMAN, MW ;

CHEN, HW ;

BOSCHERINI, F ;

HILL, DM ;

CHAMBERS, SA ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (05) :2375-2384

[27]

Xu F., UNPUB

← 1 2 3 →