INFLUENCE OF THE IMPACT ANGLE ON THE DEPTH RESOLUTION AND THE SENSITIVITY IN SIMS DEPTH PROFILING USING A CESIUM ION-BEAM

被引:34
作者
WITTMAACK, K
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.572775
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1350 / 1354
页数:5
相关论文
共 22 条
[1]   MECHANISM OF SIMS MATRIX EFFECT [J].
DELINE, VR ;
KATZ, W ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1978, 33 (09) :832-835
[2]  
DELINE VR, 1978, APPL PHYS LETT, V33, P587
[3]   DEPTH DISTRIBUTIONS OF LOW-ENERGY DEUTERIUM IMPLANTED INTO SILICON AS DETERMINED BY SIMS [J].
MAGEE, CW ;
COHEN, SA ;
VOSS, DE ;
BRICE, DK .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :383-387
[4]   SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION [J].
MAGEE, CW ;
HARRINGTON, WL ;
HONIG, RE .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (04) :477-485
[5]   DEPTH PROFILING BY SIMS DEPTH RESOLUTION, DYNAMIC-RANGE AND SENSITIVITY [J].
MAGEE, CW ;
HONIG, RE .
SURFACE AND INTERFACE ANALYSIS, 1982, 4 (02) :35-41
[6]   MASS REDISTRIBUTION BY ATOMIC MIXING IN SPUTTER DEPTH PROFILING [J].
MATTESON, S .
APPLIED SURFACE SCIENCE, 1981, 9 (1-4) :335-344
[7]  
Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124
[8]   EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J].
STORMS, HA ;
BROWN, KF ;
STEIN, JD .
ANALYTICAL CHEMISTRY, 1977, 49 (13) :2023-2030
[9]   ELEMENT-SPECIFIC BROADENING EFFECTS IN SIMS DEPTH PROFILING OF LIGHT IMPURITIES IMPLANTED IN SILICON [J].
WACH, W ;
WITTMAACK, K .
SURFACE AND INTERFACE ANALYSIS, 1982, 4 (06) :230-233
[10]   IMPLANTATION AND ION-BEAM MIXING IN THIN-FILM ANALYSIS [J].
WILLIAMS, P ;
BAKER, JE .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :15-24