ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE PYROLYTIC SIO2 ON INP

被引：6

作者：

BENNETT, BR

LORENZO, JP

VACCARO, K

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 03期

关键词：

D O I：

10.1049/el:19880114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：172 / 173

页数：2

共 10 条

[1] LOW-TEMPERATURE PYROLYTIC DEPOSITION OF HIGH-QUALITY SIO2 [J].

BENNETT, BR ;

LORENZO, JP ;

VACCARO, K ;

DAVIS, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) :2517-2521

[2] GROWTH OF ANODIC AL2O3/NATIVE OXIDE DOUBLE-LAYERS ON INP [J].

CHANG, RR ;

HWANG, T ;

GEIB, KM ;

WILMSEN, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1243-1247

[3] SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE [J].

CHANG, RR ;

IYER, R ;

LILE, DL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1995-2004

[4] REDUCTION OF THE CONCENTRATION OF SLOW INSULATOR STATES IN SIO2/INP METAL-INSULATOR SEMICONDUCTOR STRUCTURES [J].

KULISCH, W ;

KASSING, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :523-529

[5]

MEINERS LG, 1985, PHYSICS CHEM 3 5 COM, P247

[6]

MESSICK L, 1988, DIELECTRIC FILMS COM

[7] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .2. THE PRESSURE RANGE ABOVE 10 MTORR [J].

RAY, AK ;

REISMAN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2466-2472

[8] PREPARATION OF SIO2 FILM BY PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION USING A DEUTERIUM LAMP AND ITS ANNEALING EFFECT [J].

TOYODA, Y ;

INOUE, K ;

OKUYAMA, M ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06) :835-840

[9] INP MISFET TECHNOLOGY - INTERFACE CONSIDERATIONS [J].

WAGER, JF ;

OWEN, SJT ;

PRASAD, SJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) :160-165

[10] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO2/INP INTERFACE [J].

WAGER, JF ;

WILMSEN, CW .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5789-5797

← 1 →