TURNOVER PHENOMENON IN N NU N SI DEVICES AND SECOND BREAKDOWN IN TRANSISTORS

被引：7

作者：

AGATSUMA, T

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：748 / +

页数：1

共 18 条

[1] TURNOVER PHENOMENON OF N+N N+ PLATE CONTACT SILICON DEVICE AND 2ND BREAKDOWN IN TRANSISTORS
AGATSUMA, T
KOHISA, T
SUGIYAMA, A
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (01): : 95 - +
[2] ASPECT OF 2ND BREAKDOWN IN TRANSISTORS
AGATSUMA, T
SUGIYAMA, A
KOHISA, T
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (11) : 1372 - +
[3] AGATSUMA T, 1965, P IEEE, V53, P2142
[4] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
BACKENSTOSS, G
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710
[5] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P108
[6] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS
ENGLISH, AC
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 511 - 521
[7] SECONDARY BREAKDOWN IN TRANSISTORS
MELCHIOR, H
STRUTT, MJ
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &
[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[9] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON
PUTLEY, EH
MITCHELL, WH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464): : 193 - 200
[10] MICROPLASMAS IN SILICON
ROSE, DJ
[J]. PHYSICAL REVIEW, 1957, 105 (02): : 413 - 418