CHLORINE AND HCL RADICAL BEAM ETCHING OF III-V-SEMICONDUCTORS

被引:32
作者
LISHAN, DG
HU, EL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期
关键词
D O I
10.1116/1.584881
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents etch rate versus temperature data for GaAs and InP etched by Cl2 and HCl both with and without a remote plasma. The data is described both qualitatively and quantitatively by a thermodynamic model utilizing reactant-flux-limited and product-desorption-limited regimes. This "ionless" etching technique demonstrates reactant-flux-limited, temperature-independent behavior for HCl etching of GaAs for over five orders of magnitude of flux. InP and GaAs show nearly equirate etching at T > 150-degrees-C with both gases. Reactive ion etching (RIE) with Cl2 of InP at elevated temperatures produces only moderate rate enhancements; RIE gave a maximum etch rate of-approximately-800-angstrom/min at 175-degrees-C compared to-approximately-0.5 mu-m/min obtained with the remote plasma system at the same temperature.
引用
收藏
页码:1951 / 1955
页数:5
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