THERMAL ANNEALING OF RADIATION-DAMAGE IN CMOS ICS IN THE TEMPERATURE RANGE-140-DEGREES-C TO +375-DEGREES-C

被引:6
作者
DANCHENKO, V
FANG, PH
BRASHEARS, SS
机构
[1] BOSTON COLL,CHESTNUT HILL,MA 02167
[2] SPACE SCI SERV,LAUREL,MD 20707
关键词
D O I
10.1109/TNS.1982.4336435
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1716 / 1720
页数:5
相关论文
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