INFLUENCE OF NEGATIVE-IONS IN RF-GLOW DISCHARGES IN SIH4 AT 13.56 MHZ

被引：52

作者：

MAKABE, T

TOCHIKUBO, F

NISHIMURA, M

机构：

[1] Department of Electrical Engineering, Faculty of Science and Technology, Keio University, Yokohama 223

来源：

PHYSICAL REVIEW A | 1990年 / 42卷 / 06期

关键词：

D O I：

10.1103/PhysRevA.42.3674

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

New experimental evidence of the plasma structure has been presented in the rf glow discharge in SiH4 at 13.56 MHz by spatiotemporal emission spectroscopy. Theoretical estimation by the relaxation continuum model strongly supports the accumulative effect of the negative ion, SiHn-, by the electron attachment in the bulk plasma due to the potential barriers in the positive-ion sheath on the discharge structure. © 1990 The American Physical Society.

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页码：3674 / 3677

页数：4

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