ON THE STRUCTURAL FEATURES OF DOPED AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS

被引：23

作者：

BHATIA, KL ^{[1
]}

GOSAIN, DP ^{[1
]}

PARTHASARATHY, G ^{[1
]}

GOPAL, ESR ^{[1
]}

机构：

[1] INDIAN INST SCI,INSTRUMENTAT & SERV UNIT,BANGALORE 560012,KARNATAKA,INDIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1986年 / 86卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(86)90475-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：65 / 71

页数：7

共 14 条

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[9] DOPING OF CHALCOGENIDE GLASSES IN THE GE-SE AND GE-TE SYSTEMS [J].

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[10] ELECTRICAL-PROPERTIES OF GLASSES IN THE GE-BI-SB-SE AND GE-BI-S SYSTEMS [J].

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