IN-SITU OBSERVATION OF SURFACE-MORPHOLOGY EVOLUTION CORRESPONDING TO REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE

被引：9

作者：

HOMMA, Y ^{[1
]}

OSAKA, J ^{[1
]}

INOUE, N ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9B期

关键词：

SCANNING ELECTRON MICROSCOPY; IN SITU OBSERVATION; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; 2D ISLAND; RHEED OSCILLATION;

D O I：

10.1143/JJAP.34.L1187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used scanning electron microscopy (SEM) for real-time observation of surface evolution during molecular beam epitaxy (MBE) of GaAs. Surface morphology oscillation is imaged in the initial stage of growth. The nucleation-coalescence process of 2D islands is directly compared with the reflection high-energy electron diffraction intensity oscillation. The first-layer islands coalesce almost completely to form a uniform layer, while holes and islands are observed on successive layers. The size of nucleated islands increases every layer-growth cycle, resulting in multilayer growth and coarsening of the surface.

引用

页码：L1187 / L1190

页数：4

共 17 条

[1] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES [J].

FARRELL, HH ;

HARBISON, JP ;

PETERSON, LD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1482-1489

[2]

HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[3] SECONDARY-ELECTRON IMAGING OF MONOLAYER STEPS ON A CLEAN SI(111) SURFACE [J].

HOMMA, Y ;

TOMITA, M ;

HAYASHI, T .

SURFACE SCIENCE, 1991, 258 (1-3) :147-152

[4] ATOMIC CONFIGURATION DEPENDENT SECONDARY-ELECTRON EMISSION FROM RECONSTRUCTED SILICON SURFACES [J].

HOMMA, Y ;

SUZUKI, M ;

TOMITA, M .

APPLIED PHYSICS LETTERS, 1993, 62 (25) :3276-3278

[5] IN-SITU OBSERVATION OF MONOLAYER STEPS DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE BY SCANNING ELECTRON-MICROSCOPY [J].

HOMMA, Y ;

OSAKA, J ;

INOUE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (4B) :L563-L566

[6] ATOMIC STEP IMAGING ON SILICON SURFACES BY SCANNING ELECTRON-MICROSCOPY [J].

HOMMA, Y ;

TOMITA, M ;

HAYASHI, T .

ULTRAMICROSCOPY, 1993, 52 (02) :187-192

[7] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ICHIKAWA, M ;

DOI, T .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143

[8] NUCLEATION OF ISLANDS IN GAAS MOLECULAR-BEAM EPITAXY STUDIED BY IN-SITU SCANNING ELECTRON-MICROSCOPY [J].

INOUE, N ;

OSAKA, J ;

HOMMA, Y .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :107-109

[9] ELEMENTARY PROCESSES IN MOLECULAR-BEAM EPITAXY STUDIED BY IN-SITU SCANNING ELECTRON-MICROSCOPY [J].

INOUE, N .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :334-339

[10] REAL-TIME SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATIONS OF III-V GROWTH DURING MOLECULAR-BEAM EPITAXY [J].

ISU, T ;

MORISHITA, Y ;

GOTO, S ;

NOMURA, Y ;

KATAYAMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1176-1179

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