INFLUENCE OF AC CONTACT IMPEDANCE ON HIGH-FREQUENCY, LOW-TEMPERATURE, OR FAST-TRANSIENT JUNCTION MEASUREMENTS IN SEMICONDUCTORS

被引：8

作者：

SHIAU, JJ

FAHRENBRUCH, AL

BUBE, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1556 / 1561

页数：6

共 17 条

[1] LOW RESISTANCE CONTACTS TO P-TYPE CADMIUM TELLURIDE [J].

ANTHONY, TC ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :89-109

[2]

ANTHONY TC, 1983, THESIS STANFORD U

[3]

Basol B. M., 1985, Journal of Applied Physics, V58, P3809, DOI 10.1063/1.335595

[4] ELECTRONIC-PROPERTIES OF DEEP LEVELS IN PARA-TYPE CDTE [J].

COLLINS, RT ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1633-1636

[5] USE OF SPATIALLY DEPENDENT ELECTRON-CAPTURE TO PROFILE DEEP-LEVEL DENSITIES IN SCHOTTKY BARRIERS [J].

GOMBIA, E ;

GHEZZI, C ;

MOSCA, R .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1285-1291

[6] ORIGIN OF DEEP LEVELS IN THE DEPLETION REGION OF P-ZNTE/N+-CDTE HETEROJUNCTION DETERMINED BY DLTS [J].

KHAN, MRH ;

SAJI, M .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4668-4671

[7] COMPARATIVE-STUDY OF ADMITTANCE SPECTROSCOPY AND DLTS IN DETERMINING TRAP LEVELS OF CDTE-ZNTE HETEROJUNCTIONS [J].

KHAN, MRH ;

SAJI, M .

SOLID-STATE ELECTRONICS, 1986, 29 (02) :253-256

[8] CURRENT TRANSPORT AND STRUCTURAL MODEL FOR LI-DIFFUSED CDTE LOW-RESISTANCE CONTACTS [J].

LEE, CT ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :880-889

[9] THE USE OF SPATIALLY-DEPENDENT CARRIER CAPTURE RATES FOR DEEP-LEVEL-DEFECT TRANSIENT STUDIES [J].

LI, GP ;

WANG, KL .

SOLID-STATE ELECTRONICS, 1983, 26 (09) :825-833

[10] CONTACT RESISTANCE - ITS MEASUREMENT AND RELATIVE IMPORTANCE TO POWER LOSS IN A SOLAR-CELL [J].

MEIER, DL ;

SCHRODER, DK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :647-653

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