STABLE AND UNSTABLE SURFACE-STATE CHARGE IN THERMALLY OXIDIZED SILICON

被引：16

作者：

BREED, DJ ^{[1
]}

KRAMER, RP ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 11期

关键词：

D O I：

10.1016/0038-1101(76)90100-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 907

页数：11

共 20 条

[11] CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTS
FOWKES, FM
HESS, DW
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 377 - 379
[12] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES
GOETZBER.A
LOPEZ, AD
STRAIN, RJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 90 - 96
[13] LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING
GOETZBERGER, A
IRVIN, JC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 1009 - +
[14] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS
GOETZBERGER, A
NIGH, HE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1454 - +
[15] STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +
[16] INVESTIGATION OF RELATION BETWEEN INTERFACE STATE AND 1-F NOISE BEHAVIORS IN SILICON MOS-TRANSISTOR WITH NEGATIVE BIAS-HEAT TREATMENT
KOBAYASHI, I
NAKAHARA, M
ATSUMI, M
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (08) : 1145 - 1146
[17] STUDY OF SI-SIO2 INTERFACE STATE WITH NEGATIVE BIAS-HEAT TREATMENT APPROACH
KOBAYASHI, I
NAKAHARA, M
ATSUMI, M
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (02) : 249 - 250
[18] KOOI E, 1965, PHILIPS RES REP, V20, P578
[19] DIFFUSION OF HYDROGEN AND DEUTERIUM IN FUSED QUARTZ
LEE, RW
FRANK, RC
SWETS, DE
[J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (04) : 1062 - &
[20] EFFECT OF ALUMINUM LINEWIDTH ON ANNEALING OF FAST STATES IN MOS STRUCTURES
SCHLEGEL, ES
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 839 - &

← 1 2 →