ELECTRICAL CHARACTERIZATION OF AL-SIO2-SI (N-TYPE) TUNNEL STRUCTURES - INFLUENCE OF LPCVD AND LPO2 OXIDE-GROWTH TECHNOLOGIES ON THE PROPERTIES OF THE SI-SIO2 INTERFACE

被引：12

作者：

PANANAKAKIS, G ^{[1
]}

KAMARINOS, G ^{[1
]}

ELSAYED, M ^{[1
]}

LEGOASCOZ, V ^{[1
]}

机构：

[1] SOC THOMSON EFICS, F-38031 GRENOBLE, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期

关键词：

D O I：

10.1016/0038-1101(83)90097-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：415 / 426

页数：12

共 37 条

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