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SOLID-PHASE RECRYSTALLIZATION IN MOLECULAR-BEAM DEPOSITED GALLIUM-ARSENIDE
被引:6
作者
:
KANATA, T
论文数:
0
引用数:
0
h-index:
0
KANATA, T
TAKAKURA, H
论文数:
0
引用数:
0
h-index:
0
TAKAKURA, H
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
HAMAKAWA, Y
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 54卷
/ 08期
关键词
:
D O I
:
10.1063/1.100869
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:706 / 708
页数:3
相关论文
共 11 条
[1]
REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS
[J].
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
CSEPREGI, L
;
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
KENNEDY, EF
;
GALLAGHER, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
GALLAGHER, TJ
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
MAYER, JW
;
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
SIGMON, TW
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(10)
:4234
-4240
[2]
SPACE PHOTOVOLTAIC SOLAR BREEDER BY GRAPHOEPITAXIAL GROWTH OF THIN-FILM SOLAR-CELLS
[J].
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka Univ, Osaka, Jpn, Osaka Univ, Osaka, Jpn
HAMAKAWA, Y
;
TAKAKURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka Univ, Osaka, Jpn, Osaka Univ, Osaka, Jpn
TAKAKURA, H
.
ACTA ASTRONAUTICA,
1986,
14
:439
-444
[3]
HAMAKAWA Y, 1988, Patent No. 4717630
[4]
GRAPHOEPITAXIAL GROWTH OF ZNS ON A TEXTURED NATURAL CRYSTALLINE SURFACE RELIEF FOREIGN SUBSTRATE
[J].
KANATA, T
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KANATA, T
;
TAKAKURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
TAKAKURA, H
;
MIZUHARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
MIZUHARA, H
;
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
HAMAKAWA, Y
;
KARIYA, T
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KARIYA, T
.
JOURNAL OF APPLIED PHYSICS,
1988,
64
(07)
:3492
-3496
[5]
INTERFACE STRUCTURE EVOLUTION AND IMPURITY EFFECTS DURING SOLID-PHASE-EPITAXIAL GROWTH IN GAAS
[J].
LICOPPE, C
论文数:
0
引用数:
0
h-index:
0
LICOPPE, C
;
NISSIM, YI
论文数:
0
引用数:
0
h-index:
0
NISSIM, YI
;
MERIADEC, C
论文数:
0
引用数:
0
h-index:
0
MERIADEC, C
;
KRAUZ, P
论文数:
0
引用数:
0
h-index:
0
KRAUZ, P
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(04)
:1352
-1358
[6]
IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH-RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY - A FREE-CARRIER EFFECT
[J].
LICOPPE, C
论文数:
0
引用数:
0
h-index:
0
LICOPPE, C
;
NISSIM, YI
论文数:
0
引用数:
0
h-index:
0
NISSIM, YI
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(02)
:432
-438
[7]
DIRECT MEASUREMENT OF SOLID-PHASE EPITAXIAL-GROWTH KINETICS IN GAAS BY TIME-RESOLVED REFLECTIVITY
[J].
LICOPPE, C
论文数:
0
引用数:
0
h-index:
0
LICOPPE, C
;
NISSIM, YI
论文数:
0
引用数:
0
h-index:
0
NISSIM, YI
;
MERIADEC, C
论文数:
0
引用数:
0
h-index:
0
MERIADEC, C
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(08)
:3094
-3096
[8]
POLAR SEMICONDUCTOR QUANTUM WELLS ON NONPOLAR SUBSTRATES - (AL,GA)AS GAAS ON (100)GE
[J].
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
MASSELINK, WT
;
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
FISCHER, R
;
KLEM, J
论文数:
0
引用数:
0
h-index:
0
KLEM, J
;
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
HENDERSON, T
;
PEARAH, P
论文数:
0
引用数:
0
h-index:
0
PEARAH, P
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
.
APPLIED PHYSICS LETTERS,
1984,
45
(04)
:457
-459
[9]
INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL
[J].
NARAYAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, United States
NARAYAN, J
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
:8607
-8614
[10]
SILICON-ON-INSULATOR BY GRAPHOEPITAXY AND ZONE-MELTING RECRYSTALLIZATION OF PATTERNED FILMS
[J].
SMITH, HI
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
SMITH, HI
;
GEIS, MW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
GEIS, MW
;
THOMPSON, CV
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
THOMPSON, CV
;
ATWATER, HA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
ATWATER, HA
.
JOURNAL OF CRYSTAL GROWTH,
1983,
63
(03)
:527
-546
←
1
2
→
共 11 条
[1]
REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS
[J].
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
CSEPREGI, L
;
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
KENNEDY, EF
;
GALLAGHER, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
GALLAGHER, TJ
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
MAYER, JW
;
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
SIGMON, TW
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(10)
:4234
-4240
[2]
SPACE PHOTOVOLTAIC SOLAR BREEDER BY GRAPHOEPITAXIAL GROWTH OF THIN-FILM SOLAR-CELLS
[J].
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka Univ, Osaka, Jpn, Osaka Univ, Osaka, Jpn
HAMAKAWA, Y
;
TAKAKURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka Univ, Osaka, Jpn, Osaka Univ, Osaka, Jpn
TAKAKURA, H
.
ACTA ASTRONAUTICA,
1986,
14
:439
-444
[3]
HAMAKAWA Y, 1988, Patent No. 4717630
[4]
GRAPHOEPITAXIAL GROWTH OF ZNS ON A TEXTURED NATURAL CRYSTALLINE SURFACE RELIEF FOREIGN SUBSTRATE
[J].
KANATA, T
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KANATA, T
;
TAKAKURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
TAKAKURA, H
;
MIZUHARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
MIZUHARA, H
;
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
HAMAKAWA, Y
;
KARIYA, T
论文数:
0
引用数:
0
h-index:
0
机构:
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KOCHI UNIV,FAC SCI,DEPT PHYS,KOCHI 780,JAPAN
KARIYA, T
.
JOURNAL OF APPLIED PHYSICS,
1988,
64
(07)
:3492
-3496
[5]
INTERFACE STRUCTURE EVOLUTION AND IMPURITY EFFECTS DURING SOLID-PHASE-EPITAXIAL GROWTH IN GAAS
[J].
LICOPPE, C
论文数:
0
引用数:
0
h-index:
0
LICOPPE, C
;
NISSIM, YI
论文数:
0
引用数:
0
h-index:
0
NISSIM, YI
;
MERIADEC, C
论文数:
0
引用数:
0
h-index:
0
MERIADEC, C
;
KRAUZ, P
论文数:
0
引用数:
0
h-index:
0
KRAUZ, P
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(04)
:1352
-1358
[6]
IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH-RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY - A FREE-CARRIER EFFECT
[J].
LICOPPE, C
论文数:
0
引用数:
0
h-index:
0
LICOPPE, C
;
NISSIM, YI
论文数:
0
引用数:
0
h-index:
0
NISSIM, YI
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(02)
:432
-438
[7]
DIRECT MEASUREMENT OF SOLID-PHASE EPITAXIAL-GROWTH KINETICS IN GAAS BY TIME-RESOLVED REFLECTIVITY
[J].
LICOPPE, C
论文数:
0
引用数:
0
h-index:
0
LICOPPE, C
;
NISSIM, YI
论文数:
0
引用数:
0
h-index:
0
NISSIM, YI
;
MERIADEC, C
论文数:
0
引用数:
0
h-index:
0
MERIADEC, C
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(08)
:3094
-3096
[8]
POLAR SEMICONDUCTOR QUANTUM WELLS ON NONPOLAR SUBSTRATES - (AL,GA)AS GAAS ON (100)GE
[J].
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
MASSELINK, WT
;
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
FISCHER, R
;
KLEM, J
论文数:
0
引用数:
0
h-index:
0
KLEM, J
;
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
HENDERSON, T
;
PEARAH, P
论文数:
0
引用数:
0
h-index:
0
PEARAH, P
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
.
APPLIED PHYSICS LETTERS,
1984,
45
(04)
:457
-459
[9]
INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL
[J].
NARAYAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, United States
NARAYAN, J
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
:8607
-8614
[10]
SILICON-ON-INSULATOR BY GRAPHOEPITAXY AND ZONE-MELTING RECRYSTALLIZATION OF PATTERNED FILMS
[J].
SMITH, HI
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
SMITH, HI
;
GEIS, MW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
GEIS, MW
;
THOMPSON, CV
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
THOMPSON, CV
;
ATWATER, HA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
ATWATER, HA
.
JOURNAL OF CRYSTAL GROWTH,
1983,
63
(03)
:527
-546
←
1
2
→