STUDY OF BANDGAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON MOS CAPACITORS

被引：13

作者：

CHEN, HC ^{[1
]}

LI, SS ^{[1
]}

TENG, KW ^{[1
]}

机构：

[1] MOTOROLA INC,APRDL,AUSTIN,TX 78721

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 05期

关键词：

D O I：

10.1016/0038-1101(89)90120-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：339 / 344

页数：6

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