COSPUTTERED W75C25 THIN-FILM DIFFUSION-BARRIERS

被引：17

作者：

YANG, HY ^{[1
]}

ZHAO, XA ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

THIN SOLID FILMS | 1988年 / 158卷 / 01期

关键词：

D O I：

10.1016/0040-6090(88)90301-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：45 / 50

页数：6

共 8 条

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[3] THERMAL-STABILITY OF THE ALUMINUM TITANIUM CARBIDE SILICON CONTACT SYSTEM [J].

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MURARKA, SP .

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[4]

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[5]

GURP GJ, 1979, J APPL PHYS, V50, P6915

[6] INFLUENCE OF CU AS AN IMPURITY IN AL/TI AND AL/W THIN-FILM REACTIONS [J].

KRAFCSIK, I ;

GYULAI, J ;

PALMSTROM, CJ ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1015-1017

[7] INTERFACIAL REACTIONS BETWEEN ALUMINUM AND TRANSITION-METAL NITRIDE AND CARBIDE FILMS [J].

WITTMER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1007-1012

[8] CHARACTERIZATION OF COSPUTTERED TUNGSTEN CARBIDE THIN-FILMS [J].

YANG, HY ;

ZHAO, XA ;

NICOLET, MA .

THIN SOLID FILMS, 1988, 158 (01) :37-44

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