NONALLOYED OHMIC CONTACTS FOR P+-TYPE INGAAS BASE LAYER IN HBTS

被引：17

作者：

RESSEL, P ^{[1
]}

VOGEL, K ^{[1
]}

FRITZSCHE, D ^{[1
]}

MAUSE, K ^{[1
]}

机构：

[1] FORSCHUNGSINST DEUTSCH BUNDESPOST TELEKOM,W-6100 DARMSTADT,GERMANY

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 24期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; INDIUM COMPOUNDS; OHMIC CONTACTS;

D O I：

10.1049/el:19921437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two new metallisation systems, Pd/Pt and Cr/Au, for nonalloyed ohmic contacts on p+-InGaAs have been compared with the Ti/Pt contact. The observed strong dependence of the contact resistivity on the metal is related to its work function. The lowest resistivities are achieved with Pd/Pt, e.g. 1.2 x 10(-6) OMEGAcm2 for p = 1.7 x 10(19) cm-3.

引用

页码：2237 / 2238

页数：2

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