ELECTRICAL-PROPERTIES OF MOSFETS WITH N2O-NITRIDED LPCVD SIO2 GATE DIELECTRICS

被引：12

作者：

AHN, J ^{[1
]}

KWONG, DL ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents electrical properties of MOSFET's with gate dielectrics of low-pressure chemical-vapor-deposited (LPCVD) SiO2 nitrided in N2O ambient compared to those with control thermal gate oxide. N2O nitridation of CVD oxide combines the advantages of interfacial oxynitride growth and the defect-less nature of CVD oxide. As a result, devices with N2O-nitrided CVD oxide show considerably enhanced performance (higher effective electron mobility), improved reliability (reduced charge trapping, interface state generation, and transconductance degradation), and better TDDB properties (t(BD)) compared to devices with control thermal oxide.

引用

页码：494 / 496

页数：3

共 19 条

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