IMPROVEMENT OF A MICROWAVE ION-SOURCE FOR SURFACE MODIFICATION

被引：6

作者：

SAKUDO, N

TOKIGUCHI, K

SEKI, T

KOIKE, H

IWAKI, M

机构：

[1] HITACHI LTD,NAKA WORKS,KATSUTA,IBARAKI 312,JAPAN

[2] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1989年 / 116卷

关键词：

D O I：

10.1016/0921-5093(89)90150-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：221 / 225

页数：5

共 8 条

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[2] RIKEN 200 KV HIGH-CURRENT IMPLANTER FOR METAL-SURFACE MODIFICATION [J].

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[3] HIGH-CURRENT ION IMPLANTER USING A MICROWAVE ION-SOURCE [J].

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[5]

SAKUDO N, 1984, VACUUM, V34, P245, DOI 10.1016/0042-207X(84)90136-2

[6] HIGH-ENERGY ION-IMPLANTATION FOR C-MOS ISOLATION N-WELLS TECHNOLOGY - PROBLEMS RELATED TO THE USE OF MULTICHARGED PHOSPHORUS IONS IN AN INDUSTRIAL CONTEXT [J].

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ESCARON, J ;

SOUBIE, A ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :283-286

[7] ENERGY ANALYSIS OF MICROWAVE ION SOURCES [J].

TOKIGUCHI, K ;

SAKUDO, N ;

KOIKE, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (01) :29-34

[8] PLASMA UNIFORMITY OF MICROWAVE ION SOURCES [J].

TOKIGUICHI, K ;

SAKUDO, N ;

SUZUKI, K ;

KANOMATA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1247-1251

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