INSITU MEASUREMENT OF SILICON OXIDATION-KINETICS BY MONITORING SPECTRALLY EMITTED RADIATION

被引：6

作者：

SCHIROKY, GH ^{[1
]}

机构：

[1] GA TECHNOL INC,SAN DIEGO,CA 92121

来源：

JOURNAL OF MATERIALS SCIENCE | 1987年 / 22卷 / 10期

关键词：

D O I：

10.1007/BF01161465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：3595 / 3601

页数：7

共 15 条

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