DIFFUSION OF OXYGEN IN SILICON THERMAL OXIDES

被引:23
作者
TAFT, EA
机构
[1] GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
关键词
D O I
10.1149/1.2113605
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
24
引用
收藏
页码:2486 / 2489
页数:4
相关论文
共 24 条
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