OPTICAL-DETECTION OF MULTIPLE-TRAPPING RELAXATION IN DISORDERED CRYSTALLINE SEMICONDUCTORS

被引：25

作者：

GOBEL, EO

GRAUDSZUS, W

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.48.1277

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1277 / 1280

页数：4

共 24 条

[11] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .1. TEMPERATURE AND HOLE-CONCENTRATION DEPENDENCE [J].

OLEGO, D ;

CARDONA, M .

PHYSICAL REVIEW B, 1980, 22 (02) :886-893

[12] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J].

ORENSTEIN, J ;

KASTNER, M .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1421-1424

[13] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA .

SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89

[14] TIME-RESOLVED OPTICAL-ABSORPTION AND MOBILITY OF LOCALIZED CHARGE-CARRIERS IN A-AS2SE3 [J].

ORENSTEIN, J ;

KASTNER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (02) :161-165

[15] TIME-DEPENDENT ELECTRICAL TRANSPORT IN AMORPHOUS SOLIDS - AS2SE3 [J].

PFISTER, G ;

SCHER, H .

PHYSICAL REVIEW B, 1977, 15 (04) :2062-2083

[16] DISPERSIVE (NON-GAUSSIAN) TRANSIENT TRANSPORT IN DISORDERED SOLIDS [J].

PFISTER, G ;

SCHER, H .

ADVANCES IN PHYSICS, 1978, 27 (05) :747-798

[17] PHOTOLUMINESCENCE OF SILICON-COMPENSATED GALLIUM ARSENIDE [J].

QUEISSER, HJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2909-&

[18] ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS [J].

SCHER, H ;

MONTROLL, EW .

PHYSICAL REVIEW B, 1975, 12 (06) :2455-2477

[19] TRAP-CONTROLLED DISPERSIVE TRANSPORT AND EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON [J].

SCHIFF, EA .

PHYSICAL REVIEW B, 1981, 24 (10) :6189-6192

[20] DYNAMICS OF PHOTOEXCITED GAAS BAND-EDGE ABSORPTION WITH SUBPICOSECOND RESOLUTION [J].

SHANK, CV ;

FORK, RL ;

LEHENY, RF ;

SHAH, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (02) :112-115

← 1 2 3 →