FACET DEVELOPMENT AND ITS INFLUENCE ON DEPTH RESOLUTION DURING SPUTTERING OF SI

被引：10

作者：

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

ABRIL, I ^{[1
]}

GARCIAMOLINA, R ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILMS & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

关键词：

D O I：

10.1002/sia.740070109

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SPUTTERING

引用

页码：41 / 48

页数：8

共 24 条

[1] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION
BENNINGHOVEN, A
[J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +
[2] ION-BOMBARDMENT INDUCED CHANGES IN THE SURFACE-TOPOGRAPHY OF MBE-GROWN SILICON ON GALLIUM-PHOSPHIDE
BOUDEWIJN, PR
AKERBOOM, HWP
BULLELIEUWMA, CWT
HAISMA, J
[J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 49 - 52
[3] ANALYTICAL MODELING OF SPUTTER INDUCED SURFACE MORPHOLOGY
CARTER, G
COLLIGON, JS
NOBES, MJ
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (02): : 65 - 87
[4] ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION
CARTER, G
WEBB, R
[J]. RADIATION EFFECTS LETTERS, 1979, 43 (01): : 19 - 24
[5] THEORETICAL ASSESSMENTS OF MAJOR PHYSICAL PROCESSES INVOLVED IN THE DEPTH RESOLUTION IN SPUTTER PROFILING
CARTER, G
GRASMARTI, A
NOBES, MJ
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 62 (3-4): : 119 - 152
[6] THE EFFECT OF SURFACE-TOPOGRAPHY EVOLUTION ON SPUTTER PROFILING DEPTH RESOLUTION IN SI
CARTER, G
NOBES, MJ
LEWIS, GW
BROWN, CR
[J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 35 - 40
[7] CARTER G, 1984, UNPUB VACUUM
[8] CARTER G, 1976, 7TH P INT SUMM SCH P, P261
[9] CARTER G, 1980, P S SPUTTERING, P604
[10] CARTER G, 1981, 7TH P INT C AT COLL, V2, P69