INFRARED CHARACTERIZATION OF INTERFACE STATE REDUCTION BY F2 TREATMENT IN SIO2/SI STRUCTURE USING PHOTO-CVD SIO2 FILM

被引：14

作者：

NAKAMURA, M

OKUYAMA, M

HAMAKAWA, Y

机构：

[1] Department of Electrical Engineering, Osaka University, Toyonaka, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 05期

关键词：

Fluorine; Interface state density; IR-ATR; Photo-CVD; Si surface; Si-H; Si/Si02; interface;

D O I：

10.1143/JJAP.29.L687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

IR-ATR and IR transmission spectra of photo-CVD SiO2 on Si have been measured to characterize the effect of F2 treatment on the interface formation. IR-ATR spectra show that the Si-H bonds at the interface are reduced remarkably by the F2 treatment. This reduction effect depends on the growth temperature, and the dependence is qualitatively similar to that of the interface states. IR transmission and XPS spectra show that the residual F in the SiO2/Si structure is not bonded to Si. It is considered from these measurements that the F2 treatment activates the Si surface to form tight Si-O bonds. © 1990 The Japan Society of Applied Physics.

引用

页码：L687 / L689

页数：3

共 14 条

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